| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,704 pcs
|
11704 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75842S3ST is an N-Channel Power MOSFET from ON Semiconductor, part of the UltraFET family. It is designed for high-efficiency power switching applications.
With a maximum drain-source voltage of 150V and continuous drain current of 43A at 25°C (30A at 100°C), this MOSFET offers a low on-resistance of 42mΩ at VGS=10V. The gate threshold voltage is 4V maximum, and the device can handle up to 230W power dissipation at 25°C case temperature.
The device is supplied in a surface-mount D2PAK (TO-263) package with gull-wing leads, suitable for automated assembly. It is available in tape and reel packaging. The operating junction temperature range is -55°C to 175°C.
This MOSFET is suitable for applications requiring high voltage and current handling with low conduction losses, such as power supplies, motor drives, and DC-DC converters. The UltraFET technology provides fast switching performance.
| Qty | Low | High |
|---|---|---|
| 167+ | $1.80 | $1.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150V.
It is available in a surface-mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum on-resistance is 42mΩ at VGS=10V and ID=43A.
The maximum gate charge is 175nC at VGS=20V.