| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,029 pcs
|
2029 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75645S3ST is an N-Channel MOSFET from onsemi, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 75A. The device offers a low maximum on-resistance of 14mOhm at a gate-source voltage of 10V and a drain current of 75A. The gate threshold voltage is 4V maximum at 250µA drain current. The total gate charge is 238nC at 20V gate drive, and input capacitance is 3790pF at 25V drain-source voltage. The MOSFET is capable of dissipating up to 310W of power. It is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. The operating junction temperature range is -55°C to 175°C. This device is commonly used in power supplies, motor drives, and DC-DC converters where high efficiency and compact design are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.68 | $4.68 |
| 10+ | $3.06 | $3.06 |
| 100+ | $2.28 | $2.28 |
| 500+ | $1.91 | $1.91 |
| 800+ | $1.77 | $1.77 |
| 2,400+ | $1.66 | $1.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
Surface mount D2PAK (TO-263) package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
14mOhm at Vgs=10V and Id=75A.
238nC maximum at Vgs=20V.
3790pF maximum at Vds=25V.