HUF75645S3ST N-Channel MOSFET rated for 100V drain-source voltage and 75A continuous drain current. Features low on-resistance of 14mOhm at 10V gate drive.
Mfr Part #:

HUF75645S3ST

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 100V drain-source voltage and 75A continuous drain current. Features low on-resistance of 14mOhm at 10V gate drive.
✓ Total Stock: 9,415 pcs
$ Price Range: $1.66 - $4.68

HUF75645S3ST Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,386 pcs
7386 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,029 pcs
2029 pcs On Request 1 On Request On Request 24+ On Request On Request

HUF75645S3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF75645S3ST Description

Short technical summary and product information.

The HUF75645S3ST is an N-Channel MOSFET from onsemi, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 75A. The device offers a low maximum on-resistance of 14mOhm at a gate-source voltage of 10V and a drain current of 75A. The gate threshold voltage is 4V maximum at 250µA drain current. The total gate charge is 238nC at 20V gate drive, and input capacitance is 3790pF at 25V drain-source voltage. The MOSFET is capable of dissipating up to 310W of power. It is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. The operating junction temperature range is -55°C to 175°C. This device is commonly used in power supplies, motor drives, and DC-DC converters where high efficiency and compact design are required.

HUF75645S3ST Quick Information

Product Type: MOSFET
Canonical Name: HUF75645S3ST N-Channel MOSFET, 100V, 75A, D2PAK
Subcategory: N-Channel MOSFET

HUF75645S3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75645S3ST Estimated Pricing

Qty Low High
1+ $4.68 $4.68
10+ $3.06 $3.06
100+ $2.28 $2.28
500+ $1.91 $1.91
800+ $1.77 $1.77
2,400+ $1.66 $1.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75645S3ST Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 75A.
  • Low on-resistance of 14mOhm typical.
  • Surface mount D2PAK package for easy assembly.
  • Wide operating temperature range from -55°C to 175°C.

HUF75645S3ST Applications

  • Used in high-efficiency power supply designs.
  • Suitable for motor control and DC-DC converters.
  • Ideal for automotive and industrial power systems.

HUF75645S3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUF75645S3ST?

100V.

What package is the HUF75645S3ST available in?

Surface mount D2PAK (TO-263) package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the HUF75645S3ST RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum on-resistance?

14mOhm at Vgs=10V and Id=75A.

What is the gate charge of this MOSFET?

238nC maximum at Vgs=20V.

What is the input capacitance?

3790pF maximum at Vds=25V.

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