| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75639S3S is an N-Channel MOSFET from On Semiconductor designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 56A at case temperature. The device offers a low on-resistance of 25mOhm at 10V gate drive, minimizing conduction losses. With a gate charge of 130nC and input capacitance of 2000pF, it is suitable for moderate frequency switching. The MOSFET is housed in a surface-mount D²PAK (TO-263) package, which provides excellent thermal performance with a maximum power dissipation of 200W. The operating junction temperature range is -55°C to 175°C. This component is RoHS3 compliant and has an MSL of Level 1 (unlimited). It is commonly used in power supplies, motor drives, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 178+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
56A at case temperature.
25mOhm max at 56A and 10V gate drive.
Surface mount D²PAK (TO-263-3).
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant (unverified).
4V max at 250µA drain current.