Mfr Part #:

HUF75639S3

HUF75639S3 is an N-channel MOSFET from On Semiconductor rated for 100V drain-to-source voltage and 56A continuous drain current with a maximum Rds(on) of 25mΩ.

✓ Total Stock: 7,990 pcs

$ Price Range: $1.31 - $3.68

HUF75639S3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	7,200 pcs On Request	7200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	790 pcs On Request	790 pcs	On Request	1	On Request	On Request	17+	On Request	On Request

HUF75639S3 Description

Short technical summary and product information.

The HUF75639S3 is a single N-channel power MOSFET designed for general-purpose switching applications. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 56A at case temperature. The MOSFET exhibits a low on-resistance of 25mΩ maximum at Vgs = 10V and Id = 56A, enabling efficient power handling.

Gate drive voltage is specified at 10V, with a maximum gate threshold voltage of 4V at Id = 250µA. The device supports a maximum gate-to-source voltage of ±20V. Input capacitance is 2000 pF at Vds = 25V, and total gate charge is 130 nC at Vgs = 20V, providing predictable switching behavior.

The HUF75639S3 is housed in a through-hole I2PAK (TO-262) package, offering robust mounting for power circuits. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 200W at case temperature.

HUF75639S3 Quick Information

Product Type: Single N-Channel MOSFET

Canonical Name: HUF75639S3

Subcategory: Single N-Channel

HUF75639S3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

HUF75639S3 Estimated Pricing

Qty	Low	High
1+	$3.68	$3.68
10+	$2.42	$2.42
100+	$1.70	$1.70
500+	$1.38	$1.38
800+	$1.31	$1.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75639S3 Features

100V drain-to-source voltage rating.
56A continuous drain current rating.
Low 25mΩ on-resistance at 10V gate drive.
Through-hole I2PAK package for robust mounting.
Wide junction temperature range -55°C to 175°C.

HUF75639S3 Applications

Power supply switching circuits.
Motor drive and control systems.
DC-DC converter and regulator stages.

HUF75639S3 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the HUF75639S3?

The maximum drain-to-source voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 56A at case temperature (Tc).

What is the typical on-resistance?

The maximum Rds(on) is 25mΩ at Id=56A and Vgs=10V.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the HUF75639S3 available in?

It is available in a through-hole I2PAK (TO-262) package.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	56 A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	200 W (Tc)
Rds On (Max) @ Id, Vgs	25 mΩ @ 56 A, 10 V
Supplier Device Package	I2PAK (TO-262)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA