| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75639P3-F102 is an N-Channel power MOSFET from On Semiconductor designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 56A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 25mOhm at Vgs=10V and Id=56A, enabling low conduction losses.
This MOSFET is built with Metal Oxide semiconductor technology and is optimized for fast switching. It has a maximum gate charge (Qg) of 130nC at Vgs=20V and an input capacitance (Ciss) of 2000pF at Vds=25V, which helps reduce driver requirements. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id=250µA, ensuring reliable turn-on at logic-level gate drives.
The device is supplied in a TO220-3 through-hole package, suitable for heatsink mounting in power conversion circuits. It can operate over a junction temperature range of -55°C to 175°C, making it appropriate for demanding thermal environments. Typical applications include DC-DC converters, motor drives, and power management systems.
| Qty | Low | High |
|---|---|---|
| 375+ | $1.15 | $1.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 56A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 25mOhm at Vgs=10V and Id=56A.
It comes in a TO220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
The maximum gate charge (Qg) is 130nC at Vgs=20V.