HUF75639P3 HUF75639P3 is an N-Channel power MOSFET from onsemi with 100V drain-source voltage and 56A continuous drain current in a TO-220-3 through-hole package.
Mfr Part #:

HUF75639P3

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
HUF75639P3 is an N-Channel power MOSFET from onsemi with 100V drain-source voltage and 56A continuous drain current in a TO-220-3 through-hole package.
✓ Total Stock: 4,941 pcs
$ Price Range: $2.11 - $3.57

HUF75639P3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,910 pcs
3910 pcs On Request 1 On Request On Request 17+16 On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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31 pcs
31 pcs On Request 1 On Request On Request N340AD On Request On Request

HUF75639P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF75639P3 Description

Short technical summary and product information.

The HUF75639P3 is a 100V N-Channel power MOSFET manufactured by onsemi (formerly On Semiconductor). It features a maximum continuous drain current of 56A at 25°C case temperature and a low on-resistance of 25mOhm (maximum) at Vgs=10V and Id=56A, making it suitable for high-efficiency power management applications.

 

With a maximum power dissipation of 200W at 25°C case temperature and an operating junction temperature range of -55°C to +175°C, this device can handle demanding thermal environments. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the maximum gate-source voltage rating is ±20V. The total gate charge is 130nC maximum at Vgs=20V, and the input capacitance (Ciss) is 2000pF maximum at Vds=25V, simplifying gate drive requirements.

 

The device is housed in a standard TO-220-3 through-hole package, which facilitates easy mounting on heatsinks and PCBs for power dissipation. Recommended for use in power supplies, DC-DC converters, motor control, and other power switching circuits where low conduction losses are critical.

HUF75639P3 Quick Information

Product Type: Power MOSFET
Canonical Name: onsemi HUF75639P3 N-Channel Power MOSFET
Subcategory: Single MOSFET

HUF75639P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75639P3 Estimated Pricing

Qty Low High
1+ $3.57 $3.57
10+ $2.11 $2.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75639P3 Features

  • N-Channel power MOSFET with 100V drain-source voltage.
  • 56A continuous drain current at 25°C case temperature.
  • Low on-resistance of 25mOhm at Vgs=10V.
  • Wide junction temperature range -55°C to +175°C.
  • TO-220-3 through-hole package for easy mounting.

HUF75639P3 Applications

  • High-efficiency switched-mode power supplies.
  • DC-DC converters and voltage regulator modules.
  • Motor control and driver circuits.
  • Power management for industrial and automotive systems.
  • General purpose power switching applications.

HUF75639P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HUF75639P3?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the HUF75639P3?

The continuous drain current at Tc=25°C is 56A.

What is the maximum on-resistance (Rds(on))?

The maximum on-resistance at Vgs=10V and Id=56A is 25mOhm.

What is the operating temperature range for the HUF75639P3?

The junction operating temperature range is -55°C to +175°C.

What package does the HUF75639P3 use?

It uses a TO-220-3 through-hole package.

What is the maximum gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage is 4V at Id=250µA.

What is the maximum power dissipation of the HUF75639P3?

The maximum power dissipation at Tc=25°C is 200W.

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