| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75639G3 is an N-Channel MOSFET from On Semiconductor designed for high-power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 56A at case temperature. The device offers a low on-resistance of 25mΩ at 56A drain current and 10V gate drive, ensuring efficient power handling.
With an input capacitance of 2000pF at 25V and a gate charge of 130nC at 20V, this MOSFET is suitable for moderate-speed switching circuits. The maximum power dissipation is 200W at case temperature, and the operating junction temperature range spans -55°C to 175°C.
The HUF75639G3 is packaged in a TO-247-3 through-hole package, which provides robust mechanical mounting and thermal performance. It is RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.62 | $4.62 |
| 10+ | $2.57 | $2.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-247-3 through-hole package.
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
56A at Tc.
25mΩ at 56A and 10V gate drive.
4V at 250µA drain current.