| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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710 pcs
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710 pcs | On Request | 1 | On Request | On Request | 0838/0840 | On Request | On Request |
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The HUF75637S3S is an N-Channel UltraFET power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It delivers a drain-to-source voltage (Vdss) of 100V and continuous drain current of 44A at 25°C (31A at 100°C). The maximum on-resistance (Rds(on)) is 30 mOhm at 10V gate drive, enabling low conduction losses.
This device features a maximum gate threshold voltage of 4V at 250µA drain current. The total gate charge is 108 nC at 20V, and input capacitance is 1700 pF at 25V drain-source voltage. The operating junction temperature ranges from -55°C to 175°C. Maximum power dissipation is 155W at 25°C case temperature.
The MOSFET is offered in a surface-mount D2PAK (TO-263) package, which is suitable for automated assembly. The D2PAK package provides effective thermal management through the exposed drain tab.
The maximum drain-to-source voltage is 100V.
At case temperature 25°C and 10V gate drive, the continuous drain current is 44A. At 100°C it derates to 31A.
The maximum on-resistance is 30 mOhm at a drain current of 44A and gate-source voltage of 10V.
The junction temperature range is -55°C to 175°C.
The device is offered in a D2PAK (TO-263) surface-mount package.
The maximum gate threshold voltage is 4V at a drain current of 250 µA.
The maximum total gate charge is 108 nC at a gate-source voltage of 20V.