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HUF75637P3 N-Channel Power MOSFET with 100V drain-source voltage and 44A continuous drain current. Features ultra-low on-resistance of 30mOhm at 10V gate drive.
Mfr Part #:

HUF75637P3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET with 100V drain-source voltage and 44A continuous drain current. Features ultra-low on-resistance of 30mOhm at 10V gate drive.
✓ Total Stock: 1,370 pcs
$ Price Range: $0.83

HUF75637P3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
777 pcs
On Request
777 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
593 pcs
On Request
593 pcs On Request 1 On Request On Request 02+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HUF75637P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF75637P3 Description

Short technical summary and product information.

The HUF75637P3 is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 100V and continuous drain current of 44A at 25°C case temperature. The device offers an ultra-low on-resistance of 30mOhm (max) at Vgs=10V and Id=44A, minimizing conduction losses. Gate charge is 108nC (max) at Vgs=20V, and input capacitance is 1700pF (max) at Vds=25V. The MOSFET is housed in a through-hole TO-220-3 package, suitable for PCB mounting with heatsinking. Operating junction temperature range is -55°C to 175°C. This device is RoHS3 compliant and REACH unaffected, though compliance data is unverified. The part is a direct replacement for the Fairchild Semiconductor original, now part of On Semiconductor portfolio.

HUF75637P3 Quick Information

Product Type: Power MOSFET
Series: UltraFET
Canonical Name: N-Channel UltraFET Power MOSFET, 100V, 44A, TO-220-3
Subcategory: Single MOSFET

HUF75637P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75637P3 Estimated Pricing

Qty Low High
363+ $0.83 $0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75637P3 Features

  • 100V drain-source voltage rating.
  • 44A continuous drain current capability.
  • Ultra-low 30mOhm on-resistance.
  • Through-hole TO-220-3 package.
  • Wide operating temperature range -55°C to 175°C.

HUF75637P3 Applications

  • Used in high-efficiency power supplies.
  • Suitable for DC-DC converter circuits.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

HUF75637P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the package type?

TO-220-3 (through-hole).

What is the operating temperature range?

-55°C to 175°C (junction).

Is this device RoHS compliant?

RoHS3 compliant (unverified).

What is the typical on-resistance?

30mOhm maximum at Vgs=10V, Id=44A.

What is the gate charge?

108nC maximum at Vgs=20V.

What is the continuous drain current?

44A at Tc=25°C.

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