| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,962 pcs
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4962 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The HUF75631SK8T is an N-Channel power MOSFET rated for 100V drain-source voltage and 5.5A continuous drain current at 25°C (derated to 3.5A at 100°C). It offers a low on-resistance of 39mΩ maximum at Vgs=10V, enabling efficient power switching. The gate threshold voltage is 4V maximum, and the device exhibits an input capacitance of 1225pF and a gate charge of 79nC, facilitating straightforward drive requirements.
Packaged in an 8-SOIC surface mount package (JEDEC MS-012AA), the HUF75631SK8T is designed for automated assembly. It has a maximum power dissipation of 2.5W at 25°C ambient and a junction-to-ambient thermal resistance of 50°C/W on a standard FR-4 board with a 0.76 in² copper pad. The operating junction temperature range is -55°C to 150°C, ensuring reliability in demanding environments.
This device is part of the UltraFET series from Fairchild Semiconductor (now part of On Semiconductor), known for low on-resistance and fast switching. It is suitable for a variety of power management and switching applications in industrial and consumer electronics.
100V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C.
Yes, RoHS3 Compliant (unverified).
5.5A.
39mΩ maximum.
Surface Mount.