| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75631S3ST is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency switching applications requiring a drain-source voltage rating of 100V and continuous drain current of 33A. The device features a maximum on-resistance of 40mOhm at a gate drive voltage of 10V and a drain current of 33A. Gate charge is specified at 79nC maximum at 20V, and input capacitance is 1220pF maximum at 25V drain-source voltage. The threshold voltage is 4V maximum at 250µA drain current. Power dissipation is rated at 120W at case temperature. The operating junction temperature range is -55°C to 175°C. The MOSFET is offered in a surface mount D2PAK (TO-263) package, suitable for automated assembly. The part is listed as RoHS3 compliant, though this status is unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.96 | $4.96 |
| 10+ | $3.30 | $3.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The maximum continuous drain current (Id) is 33A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 40mOhm at Id=33A and Vgs=10V.
The maximum gate charge (Qg) is 79nC at Vgs=20V.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface mount D2PAK (TO-263) package.
It is listed as RoHS3 compliant, but this status is unverified.