Mfr Part #:

HUF75617D3ST

N-Channel power MOSFET with 100V drain-source breakdown voltage and 16A continuous drain current. Features low on-resistance of 90mOhm at Vgs=10V and is housed in a TO-252AA surface-mount package.

✓ Total Stock: 1,874 pcs

$ Price Range: $0.33 - $0.38

HUF75617D3ST Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,874 pcs On Request	1874 pcs	On Request	1	On Request	On Request	05+	On Request	On Request

HUF75617D3ST Description

Short technical summary and product information.

The HUF75617D3ST is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current rating of 16A at Tc=25°C. The device offers a low on-resistance of 90mOhm (maximum) at Vgs=10V and Id=16A, contributing to reduced conduction losses.

This MOSFET utilizes advanced UltraFET technology, providing fast switching performance with a maximum gate charge of 39nC at Vgs=20V and input capacitance of 570pF at Vds=25V. The gate threshold voltage is specified at a maximum of 4V at Id=250µA, ensuring reliable turn-on characteristics.

The device is available in a TO-252AA (DPak) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 64W at Tc=25°C. The HUF75617D3ST is ideal for power management, DC-DC converters, and load switching applications where efficiency and thermal performance are critical.

HUF75617D3ST Quick Information

Product Type: Power MOSFET

Series: UltraFET

Canonical Name: N-Channel Power MOSFET, 100V, 16A, TO-252AA

Subcategory: Single N-Channel Power MOSFET

HUF75617D3ST Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

HUF75617D3ST Estimated Pricing

Qty	Low	High
2,500+	$0.38	$0.38
5,000+	$0.35	$0.35
7,500+	$0.34	$0.34
12,500+	$0.33	$0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75617D3ST Features

N-Channel MOSFET with 100V drain-source voltage.
16A continuous drain current at 25°C.
Low on-resistance of 90mOhm at 10V.
Surface-mount TO-252AA package.
Operating temperature range -55°C to 175°C.

HUF75617D3ST Applications

Ideal for DC-DC converter circuits.
Used in power management systems.
Suitable for load switching applications.
Common in motor control circuits.

HUF75617D3ST FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the HUF75617D3ST?

The drain-source voltage (Vdss) is rated at 100V.

What is the maximum continuous drain current?

The continuous drain current is 16A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 90mOhm at Vgs=10V and Id=16A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the HUF75617D3ST available in?

It is available in a TO-252AA surface-mount package (TO-252-3, DPak).

Is the HUF75617D3ST RoHS compliant?

The part is marked as RoHS3 compliant, but this status is unverified.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	16 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C to 175°C
Power Dissipation (Max)	64 W
Rds On (Max) @ Id, Vgs	90 mOhm
Storage Temperature	-55.0°C ~ 175.0°C
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V