HUF75545S3ST HUF75545S3ST is an N-Channel MOSFET from On Semiconductor with 80V drain-source voltage, 75A drain current, and 10mOhm Rds(on). It is housed in a D2PAK (TO-263) surface mount package.
Mfr Part #:

HUF75545S3ST

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
HUF75545S3ST is an N-Channel MOSFET from On Semiconductor with 80V drain-source voltage, 75A drain current, and 10mOhm Rds(on). It is housed in a D2PAK (TO-263) surface mount package.
✓ Total Stock: 20,796 pcs
$ Price Range: $1.66 - $3.99

HUF75545S3ST Available from 4 distributors

✓ Authorised
✓ Non-Authorised

HUF75545S3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF75545S3ST Description

Short technical summary and product information.

The HUF75545S3ST is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage of 80V and a continuous drain current of 75A at case temperature (Tc). The device has a low on-resistance of 10mOhm maximum at Vgs=10V and Id=75A, making it suitable for high-efficiency switching applications.

 

The MOSFET has a gate charge of 235nC at Vgs=20V and an input capacitance of 3750pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=250µA, and the maximum gate-source voltage is ±20V. It can dissipate up to 270W at case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The device is offered in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, with the supplier package designated as D²PAK (TO-263). This package is suitable for automated assembly processes and provides good thermal performance for power applications.

HUF75545S3ST Quick Information

Product Type: MOSFET
Canonical Name: HUF75545S3ST N-Channel MOSFET 80V 75A D2PAK
Subcategory: Single N-Channel

HUF75545S3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75545S3ST Estimated Pricing

Qty Low High
1+ $3.99 $3.99
10+ $2.61 $2.61
100+ $1.90 $1.90
500+ $1.76 $1.76
800+ $1.76 $1.76
2,400+ $1.67 $1.67
4,800+ $1.66 $1.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75545S3ST Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • 75A continuous drain current at case temperature.
  • Low on-resistance of 10mOhm at 10V gate drive.
  • Surface mount D2PAK (TO-263) package.
  • Operating junction temperature range -55°C to 175°C.

HUF75545S3ST Applications

  • Suitable for high-efficiency DC-DC converters.
  • Used in motor control and power management.
  • Ideal for switching power supply circuits.
  • Applicable in automotive and industrial systems.

HUF75545S3ST FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HUF75545S3ST?

The maximum drain-source voltage is 80V.

What is the maximum drain current of the HUF75545S3ST?

The maximum drain current is 75A at case temperature (Tc).

What is the on-resistance of the HUF75545S3ST?

The maximum on-resistance is 10mOhm at Vgs=10V and Id=75A.

What package does the HUF75545S3ST come in?

The HUF75545S3ST is offered in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, also known as D²PAK (TO-263).

What is the operating temperature range of the HUF75545S3ST?

The operating junction temperature range is -55°C to 175°C.

Is the HUF75545S3ST RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

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