HUF75545S3S N-Channel MOSFET rated for 80V drain-source voltage and 75A continuous drain current. Features low on-resistance of 10mOhm and surface-mount D2PAK packaging.
Mfr Part #:

HUF75545S3S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 80V drain-source voltage and 75A continuous drain current. Features low on-resistance of 10mOhm and surface-mount D2PAK packaging.
✓ Total Stock: 6,358 pcs

HUF75545S3S Available from 1 distributor

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HUF75545S3S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF75545S3S Description

Short technical summary and product information.

The HUF75545S3S is an N-Channel MOSFET from On Semiconductor designed for high-current switching applications. It supports a drain-to-source voltage of 80V and a continuous drain current of 75A at case temperature, making it suitable for power management and motor control circuits.

 

With a maximum on-resistance of 10mOhm at 75A and 10V gate drive, this device minimizes conduction losses in high-efficiency designs. The gate charge is rated at 235nC at 20V, and input capacitance is 3750pF at 25V, providing predictable switching behavior for gate drive design.

 

The device is housed in a TO-263-3 (D2PAK) surface-mount package, offering good thermal performance with a maximum power dissipation of 270W at case temperature. It operates over a junction temperature range of -55°C to 175°C, supporting demanding thermal environments.

 

This MOSFET is suitable for applications requiring high current handling and low on-resistance, such as power supplies, DC-DC converters, and load switching. The surface-mount package facilitates automated assembly in high-volume production.

HUF75545S3S Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 80V 75A MOSFET
Subcategory: Single MOSFET

HUF75545S3S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

HUF75545S3S Features

  • N-Channel MOSFET for high-current switching.
  • 80V drain-to-source voltage rating.
  • 75A continuous drain current at case temp.
  • 10mOhm low on-resistance at 75A, 10V.
  • Surface-mount D2PAK (TO-263) package.

HUF75545S3S Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Works in load switching applications.

HUF75545S3S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the HUF75545S3S?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum continuous drain current?

The continuous drain current is 75A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 10mOhm at 75A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the HUF75545S3S available in?

It is available in a TO-263-3 (D2PAK) surface-mount package.

What is the maximum power dissipation?

The maximum power dissipation is 270W at case temperature (Tc).

Is the HUF75545S3S RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified.

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