BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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7,670 pcs
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7670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,550 pcs
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1550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HUF75345P3 is an N-Channel Power MOSFET from On Semiconductor, manufactured using the UltraFET process for low on-resistance. This device is rated for 75A continuous drain current and a 55V drain-to-source voltage.
Key electrical characteristics include a maximum on-resistance of 0.007 Ohms. The MOSFET is designed to withstand high energy in avalanche mode and features a very low reverse recovery time and stored charge.
This component is suitable for applications where power efficiency is critical, such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. It is also used in power management for portable and battery-operated products.
The HUF75345P3 comes in a TO-220AB package suitable for through-hole mounting.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 55V.
The maximum continuous drain current is 75A.
The maximum on-resistance is 0.007 Ohm.
The gate-to-source voltage rating is ±20V.
The HUF75345P3 comes in a TO-220AB package.
The mounting type is through-hole.