| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75339G3 is an N-Channel power MOSFET manufactured by On Semiconductor using the UltraFET process. It is designed for high-efficiency power switching applications such as switching regulators, converters, motor drivers, and relay drivers. The device offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Tc) of 75A, with a maximum power dissipation of 200W. The on-resistance is typically 12mOhm at 75A and 10V gate drive, ensuring low conduction losses. The gate charge is 130nC at 20V, and input capacitance is 2000pF at 25V, making it suitable for moderate frequency switching. The device is packaged in a TO-247-3 through-hole package, which provides excellent thermal performance. The operating junction temperature range is -55°C to 175°C. The HUF75339G3 is RoHS3 compliant and has an MSL of 1 (unlimited). It is a direct replacement for the former Fairchild Semiconductor part.
| Qty | Low | High |
|---|---|---|
| 182+ | $1.65 | $1.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
75A at case temperature (Tc).
12mOhm maximum at 75A drain current and 10V gate-source voltage.
TO-247-3 through-hole package.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant (unverified).
4V at 250µA drain current.