| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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The HUF75337P3 is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. This component is designed for high-performance applications, featuring a continuous drain current capability of 75A and a breakdown voltage of 55V. Its low on-resistance is specified at a maximum of 0.014 Ohms.
This MOSFET is suitable for through-hole mounting, typically utilizing a TO-247 package. The UltraFET technology employed in its design ensures efficient power handling and switching characteristics. It is classified under the N-Channel FET type, making it a versatile choice for various power management circuits.
Key electrical characteristics include its high current rating and voltage handling. The component's technology is optimized for power applications where efficiency and reliability are critical. Its through-hole package facilitates integration into standard PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HUF75337P3 has a continuous drain current of 75A.
The drain to source breakdown voltage for the HUF75337P3 is 55V.
The maximum Rds On for the HUF75337P3 is 0.014 Ohm.
The HUF75337P3 is an N-Channel UltraFET Power MOSFET.
The HUF75337P3 is designed for through hole mounting.