| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75333P3 is an N-Channel power MOSFET from On Semiconductor, built with UltraFET technology for low on-resistance per silicon area. It is rated for a maximum drain-to-source voltage of 55V and continuous drain current of 66A. The typical on-resistance is 16 mOhm at 10V gate drive.
This device is suitable for power switching applications such as switching regulators, converters, motor drivers, and relay drivers. It offers a gate charge of 85 nC and input capacitance of 1300 pF. The operating junction temperature range is -55°C to 175°C.
The HUF75333P3 comes in a through-hole TO-220-3 package, providing easy mounting on standard PCBs. It is also available in alternate package variants including TO-247, TO-263AB, and TO-262AA.
| Qty | Low | High |
|---|---|---|
| 249+ | $1.21 | $1.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The maximum continuous drain current is 66A at case temperature (Tc).
The maximum on-resistance is 16 mOhm at a drain current of 66A and gate-source voltage of 10V.
The operating junction temperature range is from -55°C to 175°C.
The HUF75333P3 uses a through-hole TO-220-3 (TO-220AB) package.