| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
313 pcs
|
313 pcs | On Request | 1 | On Request | On Request | 98 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Rds On (Max) @ Id, Vgs | |
| Type |
The HUF75329S3S from Harris Semiconductor is an N-Channel UltraFET Power MOSFET designed for various power applications. This component features a continuous drain current capability of 49A and a drain-to-source voltage rating of 55V. Its typical on-resistance (Rds On) is 0.024 Ohms, indicating efficient power handling.
As a power MOSFET, the HUF75329S3S is suitable for switching and amplification tasks in electronic circuits. Its N-channel configuration and UltraFET technology contribute to its performance characteristics. The component is specified with a typical Rds On of 0.024 Ohm, which is crucial for minimizing power loss during operation.
This MOSFET is part of the broader category of discrete semiconductor products, specifically within the transistors, FETs, and MOSFETs arrays segment. Its specifications suggest applications where high current and moderate voltage handling are required, such as in power supplies, motor control, or load switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HUF75329S3S has a continuous drain current of 49A.
The drain-to-source voltage for the HUF75329S3S is 55V.
The typical Rds On for the HUF75329S3S is 0.024 Ohm.
The HUF75329S3S is an N-Channel MOSFET.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.