| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
163 pcs
|
163 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75329D3ST is an N-Channel enhancement mode MOSFET manufactured by On Semiconductor, designed for efficient power switching and management. It features a maximum drain-source voltage of 55V and a continuous drain current rating of 20A at case temperature Tc. The device offers a low on-resistance of 26mOhm maximum at 20A and 10V gate drive, enabling high efficiency in power conversion circuits. Gate charge is 65nC maximum at 20V gate-source voltage, and input capacitance is 1060pF at 25V drain-source.
This MOSFET utilizes planar technology and is housed in a surface mount TO-252AA package (DPak with 2 leads and tab). It can dissipate up to 128W at Tc and operates over a junction temperature range of -55°C to 175°C. The gate threshold voltage is 4V maximum at 250µA drain current, and recommended drive voltage is 10V to achieve minimum on-resistance.
Typical applications include DC-DC converters, motor control circuits, power supplies, and automotive systems where high efficiency and reliability are required. The device is RoHS3 compliant (unverified) and REACH unaffected (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.49 | $1.49 |
| 10+ | $1.04 | $1.04 |
| 100+ | $0.75 | $0.75 |
| 500+ | $0.59 | $0.59 |
| 1,000+ | $0.56 | $0.56 |
| 2,500+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The maximum continuous drain current is 20A at case temperature Tc.
The maximum on-resistance is 26mOhm at 20A drain current and 10V gate drive.
The maximum gate threshold voltage is 4V at 250µA drain current.
The junction operating temperature range is -55°C to 175°C.
It is available in a surface mount TO-252AA package (DPak with 2 leads and tab).
The part is flagged as RoHS3 compliant, but this is unverified and low confidence.