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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75321S3S is an N-Channel power MOSFET manufactured using the innovative UltraFET process, which achieves the lowest possible on-resistance per silicon area. It is rated for a maximum drain-source voltage of 55V and a continuous drain current of 35A at Tc=25°C. The on-resistance is typically 34mΩ at Vgs=10V and Id=35A. The device features a gate threshold voltage of 4V maximum and a gate charge of 44nC at Vgs=20V. Input capacitance is 680pF at Vds=25V. The MOSFET can dissipate up to 93W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. It is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and power management in portable and battery-operated products. The device is housed in a surface mount D²PAK (TO-263) package, which is suitable for automated assembly. The HUF75321S3S is capable of withstanding high energy in avalanche mode and features a diode with very low reverse recovery time.
| Qty | Low | High |
|---|---|---|
| 478+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
Surface mount D²PAK (TO-263) package.
-55°C to 175°C.
It is listed as RoHS3 Compliant, but this is unverified.
34 mΩ maximum at Id=35A, Vgs=10V.
44 nC maximum at Vgs=20V.
93W at Tc=25°C.