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HUF75321P3 N-Channel MOSFET rated at 55V drain-source voltage and 35A continuous drain current.
Mfr Part #:

HUF75321P3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated at 55V drain-source voltage and 35A continuous drain current.
✓ Total Stock: 466 pcs
$ Price Range: $0.68 - $2.08

HUF75321P3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
436 pcs
On Request
436 pcs On Request 1 On Request On Request 11+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HUF75321P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF75321P3 Description

Short technical summary and product information.

The HUF75321P3 is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 35 A at Tc. The device provides a maximum on-resistance (Rds on) of 34 mOhm at Id = 35 A and Vgs = 10 V. The gate charge (Qg) is 44 nC at Vgs = 20 V, and input capacitance (Ciss) is 680 pF at Vds = 25 V.

 

This MOSFET is housed in a TO-220-3 through-hole package (also referred to as supplier device package TO-220-3). The operating junction temperature range is -55°C to 175°C. Maximum power dissipation is 93 W at Tc. The gate threshold voltage (Vgs th) is 4 V at Id = 250 µA.

 

The device uses standard MOSFET (Metal Oxide) technology and is designed for general switching and power management applications. Its voltage and current ratings suit a variety of medium-power circuits requiring efficient switching and low on-resistance.

HUF75321P3 Quick Information

Product Type: MOSFET
Series: UltraFET
Canonical Name: HUF75321P3 N-Channel MOSFET
Subcategory: MOSFET

HUF75321P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75321P3 Estimated Pricing

Qty Low High
1+ $2.08 $2.08
10+ $1.01 $1.01
100+ $0.90 $0.90
500+ $0.72 $0.72
1,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75321P3 Features

  • N-Channel MOSFET 55V drain-source voltage.
  • 35A continuous drain current at Tc.
  • Low on-resistance 34mOhm at 10V drive.
  • TO-220-3 through-hole package.
  • -55 to 175 degree C junction temperature range.

HUF75321P3 Applications

  • Power management in DC-DC converters.
  • Motor control and drive circuits.
  • Load switching and power distribution.
  • Battery protection and management systems.

HUF75321P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the HUF75321P3?

55 V

How much continuous drain current can the HUF75321P3 handle?

35 A at Tc

What is the maximum on-resistance of the HUF75321P3?

34 mOhm at Id = 35 A, Vgs = 10 V

What is the package type of the HUF75321P3?

TO-220-3 through-hole

What is the operating temperature range?

-55°C to 175°C (junction)

What is the gate threshold voltage?

4 V max at Id = 250 µA

What is the maximum power dissipation?

93 W at Tc

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