| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,647 pcs
|
5647 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,812 pcs
|
2812 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75321D3ST is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management and switching applications. This device offers a drain-to-source voltage (Vdss) of 55V and a continuous drain current of 20A at 25°C case temperature. The on-resistance is specified at a maximum of 36mOhm with a 10V gate drive, enabling low conduction losses. The gate charge is 44nC at 20V, and the input capacitance is 680pF at 25V drain-source voltage. The device operates over a junction temperature range of -55°C to 175°C and can dissipate up to 93W. It is packaged in a surface-mount TO-252-3 (DPak) package with a supplier device package of TO-252AA.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.63 | $1.63 |
| 10+ | $1.03 | $1.03 |
| 100+ | $0.69 | $0.69 |
| 500+ | $0.54 | $0.54 |
| 1,000+ | $0.49 | $0.49 |
| 2,500+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C to 175°C (TJ)
RoHS3 Compliant (unverified)
44 nC at 20V