| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,478 pcs
|
1478 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology |
The HUF75321D3S is an N-Channel MOSFET manufactured by Intersil, utilizing the UltraFET™ process. This component is designed for high performance with a low on-resistance of 70 mOhm at 19A and 10V gate-source voltage. It has a maximum drain-source voltage (Vdss) of 55V and can handle a continuous drain current of 19A at 25°C.
The MOSFET has a maximum power dissipation of 55W (Tc) and operates within a temperature range of -55°C to 175°C. It is packaged in a surface-mount D-Pak (TO-252-3) and supplied in a tube.
Key electrical characteristics include a gate threshold voltage of 4V at 250µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 350pF at 25V, and gate charge (Qg) is 24nC at 20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the HUF75321D3S is 55V.
The continuous drain current (Id) at 25°C for the HUF75321D3S is 19A.
The maximum on-resistance (Rds On) for the HUF75321D3S is 70 mOhm at 19A and 10V.
The operating temperature range for the HUF75321D3S is -55°C to 175°C.
The HUF75321D3S MOSFET is supplied in a surface mount D-Pak package (TO-252-3).