| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,567 pcs
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21567 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The HUF75309D3ST is an N-Channel power MOSFET featuring the innovative UltraFET process, which achieves low on-resistance per silicon area for efficient power management. Key electrical specifications include a maximum drain-source breakdown voltage of 55V, a continuous drain current of 19A at 25°C case temperature, and a maximum on-resistance of 70mOhm at 19A drive current with 10V gate drive. The device supports a gate-source voltage range of ±20V, with a typical gate threshold voltage of 4V at 250µA drain current.
The MOSFET is housed in a surface-mount DPAK (TO-252AA) package, suitable for automated assembly and compact board layouts. It operates over a junction temperature range of -55°C to 175°C. Typical applications include switching regulators, DC-DC converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable devices.
The maximum drain-source breakdown voltage (Vdss) is 55V.
The continuous drain current is 19A at a case temperature of 25°C.
The device is offered in a surface-mount DPAK (TO-252AA) package (TO-252-3, DPak).
The junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, but this status is unverified.