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HUF75307T3ST N-Channel power MOSFET rated for 55V drain-source voltage and 2.6A continuous drain current. On-resistance is 90mOhm at 10V gate drive, in SOT-223-4 surface mount package.
Mfr Part #:

HUF75307T3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 55V drain-source voltage and 2.6A continuous drain current. On-resistance is 90mOhm at 10V gate drive, in SOT-223-4 surface mount package.
✓ Total Stock: 1,738 pcs
$ Price Range: $0.58

HUF75307T3ST Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,738 pcs
On Request
1738 pcs On Request 1 On Request On Request 03+ On Request On Request
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HUF75307T3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF75307T3ST Description

Short technical summary and product information.

The HUF75307T3ST is an N-Channel power MOSFET manufactured using the UltraFET process, designed for high efficiency in power management applications. It features a maximum drain-source voltage of 55V and a continuous drain current of 2.6A at 25°C. The on-resistance is typically 90mOhm at Vgs=10V, Id=2.6A, enabling low conduction losses.

 

This device is suitable for switching regulators, DC-DC converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. It exhibits high energy capability in avalanche mode and low reverse recovery time in the body diode.

 

The MOSFET is packaged in a surface-mount SOT-223-4 (TO-261-4) package, which is compatible with standard reflow soldering processes. It operates over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 1.1W at 25°C. Gate charge is 17nC at Vgs=20V, and input capacitance is 250pF at Vds=25V.

HUF75307T3ST Quick Information

Product Type: N-Channel MOSFET
Series: UltraFET
Canonical Name: HUF75307T3ST N-Channel MOSFET 55V 2.6A SOT-223-4
Subcategory: Single MOSFETs

HUF75307T3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75307T3ST Estimated Pricing

Qty Low High
519+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75307T3ST Features

  • N-Channel MOSFET with 55V drain-source voltage.
  • Continuous drain current rating of 2.6A.
  • Low on-resistance of 90 mOhm typical.
  • Surface mount SOT-223-4 package.
  • UltraFET process for improved efficiency.

HUF75307T3ST Applications

  • Used in switching power supply regulators.
  • Ideal for DC-DC converter circuits.
  • Suitable for motor and relay drivers.
  • Power management in portable devices.
  • Low-voltage bus switch applications.

HUF75307T3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUF75307T3ST?

55V.

What package is the HUF75307T3ST available in?

SOT-223-4 (TO-261-4) surface mount package.

What is the operating temperature range?

-55°C to +150°C.

Is the HUF75307T3ST RoHS compliant?

The available data indicates RoHS3 Compliant, but this is unverified.

What is the continuous drain current rating?

2.6A at 25°C.

What is the on-resistance?

90mOhm maximum at Vgs=10V, Id=2.6A.

What is the maximum power dissipation?

1.1W at 25°C.

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