| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75307D3ST is an N-Channel power MOSFET from On Semiconductor. It is designed for power switching applications and supports a maximum drain-to-source voltage of 55V and a continuous drain current of 15A at 25°C case temperature.
The device features a maximum on-resistance of 90mOhm at a gate-source voltage of 10V and a drain current of 15A. It offers a maximum gate threshold voltage of 4V, a total gate charge of 20nC, and an input capacitance of 250pF. Power dissipation is rated up to 45W at 25°C case temperature.
This MOSFET is housed in a TO-252AA surface-mount package (also referred to as TO-252-3, DPak, or SC-63). The operating junction temperature range is -55°C to 175°C, and the tape-and-reel packaging option supports automated assembly.
Typical applications include switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management circuits in portable and battery-operated products.
The maximum drain-to-source voltage is 55V.
The continuous drain current is 15A at a case temperature of 25°C.
The maximum on-resistance is 90mOhm at a drain current of 15A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
It comes in a surface-mount TO-252AA package, also described as TO-252-3 (DPak, SC-63).
It is listed as RoHS3 compliant and REACH unaffected based on existing database records.
The maximum gate threshold voltage is 4V at a drain current of 250µA.