| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,400 pcs
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5400 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Vgs (Max) | |
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The HUF75307D3 is an N-Channel power MOSFET manufactured by ON Semiconductor using the UltraFET process. It features a drain-source breakdown voltage of 55V and a continuous drain current of 15A at 25°C case temperature. The device has a maximum on-resistance of 90mOhm at 15A and 10V gate drive.
This MOSFET is designed for power switching applications including switching regulators, converters, motor drivers, and power management systems. It offers a gate charge of 20nC at 20V and input capacitance of 250pF at 25V, enabling efficient high-frequency operation.
The HUF75307D3 is housed in a through-hole TO-251AA (IPAK) package with a maximum power dissipation of 45W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 404+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The maximum continuous drain current is 15A at 25°C case temperature.
The maximum on-resistance is 90mOhm at 15A drain current and 10V gate-source voltage.
The HUF75307D3 is available in a through-hole TO-251AA (IPAK) package.
The operating junction temperature range is -55°C to 175°C.
The HUF75307D3 is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.