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HUF75307D3 N-Channel Power MOSFET with 55V drain-source voltage and 15A continuous drain current. Features 90mOhm on-resistance in a TO-251AA (I-PAK) through-hole package.
Mfr Part #:

HUF75307D3

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
N-Channel Power MOSFET with 55V drain-source voltage and 15A continuous drain current. Features 90mOhm on-resistance in a TO-251AA (I-PAK) through-hole package.
✓ Total Stock: 2,524 pcs
$ Price Range: $0.74

HUF75307D3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,524 pcs
On Request
2524 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HUF75307D3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF75307D3 Description

Short technical summary and product information.

This N-Channel Power MOSFET is manufactured using the innovative UltraFET® process, achieving the lowest possible on-resistance per silicon area for outstanding performance. Key electrical parameters include a drain-to-source voltage (Vdss) of 55 V, continuous drain current (Id) of 15 A, and a maximum drain-source on-resistance of 90 mOhm at Vgs = 10 V and Id = 15 A. The gate threshold voltage (Vgs(th)) is 4 V maximum at 250 µA, with a maximum gate charge of 20 nC at Vgs =20 V and input capacitance (Ciss) of250 pF at Vds =25 V. Power dissipation is rated at45 W, and the device operates over a junction temperature range of -55°C to 175°C. The HUF75307D3 is offered in a TO-251AA (I-PAK) through-hole package with short leads. It is designed for applications requiring high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, and power management in portable equipment.

HUF75307D3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel UltraFET Power MOSFET, 55V, 15A, 90mOhm, TO-251AA (I-PAK)
Subcategory: Single MOSFET

HUF75307D3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF75307D3 Estimated Pricing

Qty Low High
404+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF75307D3 Features

  • N-Channel UltraFET power MOSFET, 55V drain-source.
  • Continuous drain current rating of 15A.
  • Low on-resistance of 90 mOhm maximum.
  • Through-hole TO-251AA (I-PAK) package.
  • Operating temperature range -55°C to 175°C.

HUF75307D3 Applications

  • Ideal for switching power supply applications.
  • Suitable for motor and relay driving circuits.
  • Used in low-voltage bus switches and power management.

HUF75307D3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUF75307D3?

55 V.

What package does the HUF75307D3 come in?

TO-251AA (I-PAK) through-hole package with short leads.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the HUF75307D3 RoHS compliant?

Listed as RoHS3 compliant, but this is unverified.

What is the continuous drain current rating?

15 A.

What is the typical gate threshold voltage?

4 V maximum at 250 µA.

What is the on-resistance of the HUF75307D3?

90 mOhm maximum at Vgs = 10 V, Id = 15 A.

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