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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HSMS-2820-TR1G is a single Schottky barrier diode from Broadcom Limited, part of the HSMS-282x series designed for RF applications. It features a maximum reverse voltage of 15 V and an average rectified current of 1 A. The diode exhibits a typical forward voltage of 340 mV at 1 mA and a low series resistance of 12 Ohm at 5 mA, 1 MHz. Junction capacitance is typically 1 pF at 0V, 1MHz, making it suitable for high-frequency circuits.
This device is housed in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59. It is designed for applications such as mixing, detecting, switching, sampling, clamping, and wave shaping. The operating junction temperature is up to 150°C.
With its low forward voltage and good RF characteristics, the HSMS-2820-TR1G is a versatile choice for both analog and digital RF designs. The diode is RoHS3 compliant and has an MSL of 1 (unlimited).
The maximum reverse voltage (Vr) is 15 V.
The average rectified current (Io) is 1 A.
The typical forward voltage is 340 mV at 1 mA forward current.
Typical junction capacitance is 1 pF at 0V, 1 MHz.
Maximum reverse leakage current is 100 nA at 10 V reverse voltage.
The device is available in TO-236-3, SC-59, and SOT-23-3 packages; the supplier device package is SOT-23-3.