| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31 pcs
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31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HSMS-2810-TR1G is a single RF Schottky barrier diode from Broadcom Limited’s HSMS-281x series. It is designed for both analog and digital RF applications requiring low flicker noise and reliable switching performance.
Key electrical specifications include a reverse voltage rating of 20 V, maximum forward voltage of 400 mV at 1 mA, and typical capacitance of 1.2 pF at 0 V. Maximum reverse leakage current is 200 nA at 15 V. The diode also features very low carrier lifetime (100 ps) and a typical dynamic resistance of 15 Ω.
The device is offered in an SOT-23-3 surface mount package suitable for automated assembly. It supports tape and reel packaging and operates at junction temperatures up to 150 °C.
The minimum breakdown voltage is 20 V.
The maximum forward voltage is 400 mV at IF = 1 mA.
The typical capacitance is 1.2 pF at VR = 0 V, f = 1 MHz.
It comes in an SOT-23-3 surface mount package.
The maximum junction operating temperature is 150 °C.