| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Resistance @ If, F | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Voltage |
The HSMS-2805-TR1G is a surface mount RF Schottky barrier diode from Broadcom Limited, part of the HSMS-280x series optimized for high voltage applications. It features two independent Schottky diodes in a single SOT-143-4 package.
Key electrical specifications include a minimum breakdown voltage of 70V, maximum forward current of 1A (1 μs pulse), and low forward voltage of 410 mV at 1 mA and 1.0 V at 15 mA. Reverse leakage is limited to 200 nA at 50V reverse voltage. The diode offers low capacitance of 2 pF at 0V and 1 MHz, and typical dynamic resistance of 35 Ω at 5 mA and 1 MHz.
The device is housed in a surface mount SOT-143-4 package with gull-wing leads, suitable for automated assembly. It is lead-free and rated for operation up to 150°C junction temperature. The HSMS-2805-TR1G is designed for RF analog and digital applications requiring high breakdown voltage and low leakage.
The minimum breakdown voltage is 70V.
The maximum forward current is 1A for a 1 μs pulse.
The maximum forward voltage at 1 mA is 410 mV.
The maximum reverse leakage current at 50V is 200 nA.
It is available in a surface mount SOT-143-4 package.
The maximum junction temperature is 150°C.