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HP8K22TB HP8K22TB is a 30V dual N-channel MOSFET (half bridge) from ROHM Semiconductor, offering 4.6mOhm max on-resistance at 10V and 16.8nC gate charge.
Mfr Part #:

HP8K22TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
HP8K22TB is a 30V dual N-channel MOSFET (half bridge) from ROHM Semiconductor, offering 4.6mOhm max on-resistance at 10V and 16.8nC gate charge.
✓ Total Stock: 1,248 pcs
$ Price Range: $0.50 - $2.04

HP8K22TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,248 pcs
On Request
1248 pcs On Request 1 On Request On Request 15+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HP8K22TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Vgs(th) (Max) @ Id
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HP8K22TB Description

Short technical summary and product information.

The HP8K22TB is a 30V dual N-channel mid-power MOSFET from ROHM Semiconductor, configured as a half bridge. It delivers a maximum drain current of 27A to 57A and features a low on-resistance of 4.6mOhm at 20A and 10V gate drive. The device is designed for surface-mount assembly in an 8-PowerTDFN package (8-HSOP supplier package).

 

Key electrical characteristics include a gate threshold voltage of 2.5V and input capacitance of 1080pF at 15V drain-source voltage. Total gate charge is 16.8nC at 10V, making it suitable for moderate-speed switching applications. The junction operating temperature range spans -55°C to 150°C, and maximum power dissipation is 25W (total for both channels).

 

This MOSFET array is ideal for power management, DC-DC converters, and motor control circuits where a compact half-bridge configuration is required. With surface-mount packaging, it supports automated assembly processes.

HP8K22TB Quick Information

Product Type: Power MOSFET
Canonical Name: 30V Dual N-Channel Power MOSFET (Half Bridge)
Subcategory: Half Bridge

HP8K22TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HP8K22TB Estimated Pricing

Qty Low High
1+ $2.04 $2.04
10+ $1.30 $1.30
100+ $0.88 $0.88
500+ $0.69 $0.69
1,000+ $0.64 $0.64
2,500+ $0.55 $0.55
5,000+ $0.51 $0.51
10,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

HP8K22TB Features

  • 30V maximum drain-source voltage.
  • Low on-resistance of 4.6mOhm at 10V.
  • Dual N-channel half-bridge configuration.
  • Surface-mount 8-PowerTDFN package.
  • Wide junction temperature range -55°C to 150°C.

HP8K22TB Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor control half-bridge.
  • Suitable for load switching applications.
  • Power management in compact designs.

HP8K22TB FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HP8K22TB?

30V.

What is the on-resistance of this MOSFET?

4.6mOhm maximum at 20A drain current and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C (junction).

In what package is the HP8K22TB available?

8-PowerTDFN (8-HSOP supplier package), surface mount.

How many transistors are in the HP8K22TB?

Two N-channel MOSFETs in a half-bridge configuration.

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