| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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367 pcs
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367 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The HN58C256AP-10 from Hitachi is a 256k bit electrically erasable and programmable read-only memory (EEPROM). It is organized as 32768 words by 8 bits, offering a high-speed, low-power solution for data storage.
This EEPROM utilizes advanced MNOS memory technology and CMOS circuitry for enhanced reliability. Key electrical specifications include a single 5V ±10% supply voltage, a maximum access time of 85 ns, and low power dissipation. Active power consumption is typically 20 mW/MHz, while standby power is a maximum of 110 µW.
The device supports a 64-byte page programming function for faster write operations, with automatic byte and page writes completing in a maximum of 10 ms. It also features on-chip latches for address, data, and control signals (CE, OE, WE), data protection circuits, and conforms to the JEDEC byte-wide standard.
Available in a 28-pin plastic DIP package with 600 mil lead spacing, the HN58C256AP-10 is suitable for industrial applications with operating temperature ranges of -20°C to 85°C or -40°C to 85°C. It offers 10^5 erase/write cycles and 10 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HN58C256AP-10 is organized as 32768 words by 8 bits.
The maximum access time for the HN58C256AP-10 is 100 ns.
The HN58C256AP-10 operates from a single 5V supply with a tolerance of ±10%.
The typical active power dissipation is 20 mW/MHz.
The maximum standby power dissipation is 110 µW.
The HN58C256AP-10 is available in a 28-pin plastic DIP package.
Industrial versions are available for -20°C to 85°C and -40°C to 85°C.