| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The Renesas Technology HN58C256A and HN58C257A series are 256k electrically erasable and programmable ROMs, organized as 32768-word x 8-bit. The HN58C256AFP-10 variant offers a maximum access time of 100 ns and operates on a single 5V ±10% supply.
These EEPROMs utilize advanced MNOS memory technology and CMOS circuitry for high speed, low power consumption, and high reliability. They include a 64-byte page programming function for faster write operations, with automatic byte and page writes completing in a maximum of 10 ms. Power dissipation is typically 20 mW/MHz in active mode and a maximum of 110 µW in standby mode.
The HN58C256AFP-10 is supplied in a 28-pin plastic SOP package, suitable for surface mounting. It conforms to the JEDEC byte-wide standard and offers features like on-chip latches for address, data, CE, OE, and WE. The device also includes a data protection circuit on power on/off and supports software data protection.
Industrial versions are available with temperature ranges of -20 to 85°C and -40 to 85°C. The HN58C256AFP-10 is designed for applications requiring reliable non-volatile data storage with fast write and read capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HN58C256AFP-10 is organized as 32768-word x 8-bit.
The maximum access time for the HN58C256AFP-10 is 100 ns.
The HN58C256AFP-10 requires a single 5V supply.
Yes, it features a 64-byte page programming function for faster write operations.
The typical active power dissipation is 20 mW/MHz.
The maximum standby power dissipation is 110 µW.
The data retention period is 10 years.