| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba HN3G01J is an N Channel Junction Type FET Silicon NPN Epitaxial Type Transistor. This component is designed for various electronic applications requiring a field-effect transistor.
Key specifications include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. The REACH status is noted as unaffected.
This transistor is suitable for applications where a junction FET is required. Further details on specific electrical characteristics, operating conditions, and packaging would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HN3G01J is RoHS3 Compliant.
The MSL for the HN3G01J is Level 1.
The REACH status for the HN3G01J is Unaffected.