HN2D02FUTW1T1G This is an ultrafast switching diode array with three independent diodes, rated at 80V reverse voltage and 100mA forward current. It features a reverse recovery time of 3ns and is housed in an SC-88 surface mount package.
Mfr Part #:

HN2D02FUTW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
This is an ultrafast switching diode array with three independent diodes, rated at 80V reverse voltage and 100mA forward current. It features a reverse recovery time of 3ns and is housed in an SC-88 surface mount package.
Total Stock: 23,996 pcs
$ Price Range: $0.11 - $0.43

HN2D02FUTW1T1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,179 pcs
17179 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,817 pcs
6817 pcs On Request 1 On Request On Request N/A On Request On Request

HN2D02FUTW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Forward (If) (Max)
Diode Capacitance (Cd)
Diode Configuration
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time (trr)
Speed
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Voltage
Voltage - DC Reverse (Vr) (Max)

HN2D02FUTW1T1G Description

Short technical summary and product information.

The HN2D02FUTW1T1G from On Semiconductor is an ultra high speed switching diode array containing three independent standard silicon epitaxial planar diodes. Designed for high-speed switching applications, this device offers a reverse recovery time (trr) of typically less than 3.0 ns, making it suitable for fast switching circuits. The diodes feature a maximum forward voltage of 1.2 V at 100 mA and a reverse voltage rating of 80 V.

 

With a low diode capacitance of 2.0 pF maximum, the HN2D02FUTW1T1G minimizes signal distortion in high-frequency applications. The device can handle forward current up to 100 mA and peak forward surge current up to 240 mA. Power dissipation is rated at 300 mW, and the operating junction temperature range is up to 150°C.

 

The HN2D02FUTW1T1G is packaged in the SC-88 (SOT-363) surface mount package, which is compatible with 6-TSSOP and SC-88 footprints. It is supplied in tape and reel packaging with 3000 units per reel, suitable for automated assembly processes. The compact package makes it ideal for space-constrained designs in consumer, industrial, and automotive applications.

HN2D02FUTW1T1G Quick Information

Product Type: Ultrafast Switching Diode Array
Series: HN2D02FUTW1T1
Canonical Name: HN2D02FUTW1T1G Ultra High Speed Switching Diode Array
Subcategory: Ultrafast Switching Diodes

HN2D02FUTW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HN2D02FUTW1T1G Estimated Pricing

Qty Low High
1+ $0.43 $0.43
10+ $0.27 $0.27
100+ $0.17 $0.17
500+ $0.13 $0.13
1,000+ $0.11 $0.11
3,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

HN2D02FUTW1T1G Features

  • Three independent ultrafast switching diodes.
  • Reverse recovery time less than 3 ns.
  • Low diode capacitance of 2 pF.
  • Surface mount SC-88 package.
  • RoHS compliant.

HN2D02FUTW1T1G Applications

  • High-speed switching power supplies.
  • Signal level detection and clipping.
  • Logic and gate drive circuits.
  • Telecommunications and data lines.
  • Small signal switching applications.

HN2D02FUTW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage?

80 V

What is the maximum forward current?

100 mA per diode

What is the forward voltage drop?

Maximum 1.2 V at 100 mA

What is the reverse recovery time?

3 ns (max) at IF=10mA, VR=6V, RL=100Ω, Irr=0.1*IR

What package is this device available in?

SC-88 (also known as SC70-6, SOT-363) surface mount package.

What is the diode capacitance?

2 pF (max) at VR=0V, f=1MHz

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