| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Toshiba HN2D01JE is a silicon signal diode with a maximum forward current of 0.1A and a maximum power dissipation of 0.1W. It is configured as two separate elements within a single package.
This diode is housed in a small outline rectangular plastic/epoxy package, suitable for surface mounting. The terminal finish is TIN LEAD, and the terminals are DUAL in a FLAT form.
Key electrical characteristics include a maximum reverse recovery time of 1.6 ns. The diode element material is SILICON, and it is classified as a SIGNAL DIODE.
This component is supplied in an ESV, 1-2W1B, 5 PIN package, designed for efficient integration into modern electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
0.1 A
1.6 ns
ESV, 1-2W1B, 5 PIN (small outline, rectangular, plastic/epoxy, surface mount)
Separate, 2 elements
Surface mount
Silicon
0.1 W