| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | 1137+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Configuration | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Weight |
The Toshiba HN2D01FTE85LF is a silicon epitaxial planar diode array composed of three independent standard switching diodes. It is designed for ultra-high-speed switching applications requiring low forward voltage and fast reverse recovery.
Key electrical characteristics include a maximum reverse voltage of 80 V, an average forward current of 80 mA per diode, and a peak forward current of 240 mA. The typical forward voltage is 0.98 V at 100 mA, and the maximum forward voltage is 1.2 V at 100 mA. The reverse recovery time is typically 1.6 ns and a maximum of 4.0 ns, enabling high-speed operation. Total capacitance is typically 0.5 pF at 0 V and 1 MHz.
The device is housed in a compact SC-74 (SOT-457) surface-mount package with a power dissipation rating of 300 mW total. The operating junction temperature range is up to 150 °C for certain part number variants.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
| 10+ | $0.31 | $0.31 |
| 100+ | $0.20 | $0.20 |
| 500+ | $0.15 | $0.15 |
| 1,000+ | $0.13 | $0.13 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.10 | $0.10 |
| 9,000+ | $0.09 | $0.09 |
| 24,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRM) is 85 V, and the reverse voltage (VR) is 80 V.
The typical forward voltage is 0.98 V at 100 mA, with a maximum of 1.2 V at 100 mA. Typical values are also 0.62 V at 1 mA and 0.75 V at 10 mA.
The maximum reverse recovery time (trr) is 4.0 ns, with a typical value of 1.6 ns at IF=10 mA.
The HN2D01FTE85LF is supplied in a surface-mount SC-74 (SOT-457) package.
The average forward current (IO) is 80 mA per diode. The maximum peak forward current is 240 mA.
The typical total capacitance is 0.5 pF, with a maximum of 3.0 pF, measured at VR=0V and f=1MHz.