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HN1D02FU,LF Toshiba HN1D02FU,LF is an ultra high speed switching diode array with two common cathode pairs, rated for 80V reverse voltage and 100mA average forward current per diode. It features low forward voltage and fast reverse recovery time in a US6 surface mount package.
Mfr Part #:

HN1D02FU,LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
Toshiba HN1D02FU,LF is an ultra high speed switching diode array with two common cathode pairs, rated for 80V reverse voltage and 100mA average forward current per diode. It features low forward voltage and fast reverse recovery time in a US6 surface mount package.
Total Stock: 3,000 pcs
$ Price Range: $0.07 - $0.43

HN1D02FU,LF Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

HN1D02FU,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101 Qualified
Automotive Grade
Average Forward Current
Capacitance
Current
Diode Configuration
Forward Voltage (Typical @ IF=1 mA)
Forward Voltage (Typical @ IF=10 mA)
Maximum Forward Current
Maximum Reverse Voltage
Mounting Type
Operating Temperature
Operating Temperature - Junction
Power Dissipation
Reverse Recovery Time (trr)
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Surge Current
Tape & Reel
Technology
Voltage
Weight
reverse_leakage_current (Maximum @ VR = 30 V)

HN1D02FU,LF Description

Short technical summary and product information.

The Toshiba HN1D02FU,LF is an ultra high speed switching diode array consisting of two independent common cathode pairs (four diodes total). It is designed for high-speed switching applications requiring low forward voltage and minimal parasitic capacitance. Key electrical characteristics include a maximum reverse voltage of 80 V, average forward current of 100 mA per diode, and a typical forward voltage of 0.90 V at 100 mA. The reverse recovery time is typically 1.6 ns, and the total capacitance is only 0.9 pF typical.

 

The device is built using silicon epitaxial planar technology and is AEC-Q101 qualified, making it suitable for automotive environments. It offers a peak forward current of 300 mA and surge current handling of 2 A (10 ms). Power dissipation is rated at 200 mW when mounted on a standard FR4 board.

 

The HN1D02FU,LF is housed in a compact US6 surface mount package (also known as 6-TSSOP, SC-88, SOT-363) weighing just 6.8 mg. It supports a wide junction temperature range up to 150°C for the LF suffix version. The device is RoHS3 compliant and has an MSL of 1 (unlimited storage).

HN1D02FU,LF Quick Information

Product Type: Diode Array
Canonical Name: Toshiba HN1D02FU,LF Silicon Epitaxial Planar Ultra High Speed Switching Diode Array
Subcategory: Ultra High Speed Switching Diodes

HN1D02FU,LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HN1D02FU,LF Estimated Pricing

Qty Low High
1+ $0.43 $0.43
10+ $0.26 $0.26
100+ $0.17 $0.17
500+ $0.12 $0.12
1,000+ $0.11 $0.11
3,000+ $0.09 $0.09
9,000+ $0.07 $0.07
24,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

HN1D02FU,LF Features

  • Two common cathode diode pairs in one package.
  • Ultra high speed switching with 1.6ns trr.
  • Low forward voltage drop of 0.9V typ.
  • AEC-Q101 qualified for automotive applications.
  • Surface mount US6 package (6-TSSOP/SC-88/SOT-363).

HN1D02FU,LF Applications

  • High speed switching circuits in automotive electronics.
  • Signal steering and protection circuits.
  • General purpose rectification up to 100mA.

HN1D02FU,LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the HN1D02FU,LF?

The maximum reverse voltage is 80 V.

What is the average forward current rating?

The average forward current is 100 mA per diode.

What is the forward voltage at 100 mA?

The typical forward voltage is 0.90 V, with a maximum of 1.20 V at 100 mA.

What is the reverse recovery time?

Typical reverse recovery time is 1.6 ns, maximum 4.0 ns.

What package is the HN1D02FU,LF offered in?

It is offered in the US6 surface mount package, also known as 6-TSSOP, SC-88, SOT-363.

Is the HN1D02FU,LF AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified. Contact Toshiba sales for detailed certification information.

What is the operating junction temperature range?

For the LF suffix version, the junction temperature rating is 150°C.

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