BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,000 pcs
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32000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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27,325 pcs
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27325 pcs | On Request | 1 | On Request | On Request | 1934 | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The Toshiba HN1C01FE is a silicon NPN transistor designed for general purpose small signal applications, particularly in amplifier circuits. It features a maximum collector current of 150 mA and a collector-emitter voltage rating of 50 V.
Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a nominal transition frequency (fT) of 80 MHz. The transistor is housed in a small outline rectangular package, specifically the 2-2N1G, ES6, with a surface mount configuration.
This component is constructed with a plastic/epoxy package body and features flat, dual terminal positions with a tin-lead finish. The configuration consists of two separate elements, providing versatile application possibilities. The power dissipation is rated at a maximum of 0.1000 W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the HN1C01FE is 150 mA.
The HN1C01FE has a maximum collector-emitter voltage of 50 V.
The minimum DC current gain (hFE) for the HN1C01FE is 120.
The nominal transition frequency (fT) for the HN1C01FE is 80 MHz.
The HN1C01FE is an NPN general purpose small signal transistor.
The HN1C01FE is supplied in a 2-2N1G, ES6 small outline rectangular package for surface mounting.