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HN1A01FU-GR The Toshiba HN1A01FU-GR is a 2 PNP (Dual) Bipolar Transistor Array. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA.
Mfr Part #:

HN1A01FU-GR

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba HN1A01FU-GR is a 2 PNP (Dual) Bipolar Transistor Array. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA.
✓ Total Stock: 604,667 pcs
$ Price Range: $0.99

HN1A01FU-GR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
602,667 pcs
On Request
602667 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request 1122+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HN1A01FU-GR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Supplier Device Package
Transistor Type
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HN1A01FU-GR Description

Short technical summary and product information.

The Toshiba HN1A01FU-GR is a Bipolar Junction Transistor (BJT) array designed for discrete semiconductor applications. This component features two PNP transistors in a dual configuration, offering a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 150mA.

 

With a transition frequency of 80MHz and a maximum power dissipation of 200mW, the HN1A01FU-GR is suitable for various signal processing tasks. It operates at temperatures up to 125°C (TJ) and comes in a compact 6-TSSOP, SC-88, SOT-363 surface mount package.

 

The array is supplied in Tape & Reel (TR) or Cut Tape (CT) packaging, facilitating automated assembly processes. Its robust specifications make it a reliable choice for designers requiring dual PNP transistor functionality in a small footprint.

HN1A01FU-GR Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: Toshiba HN1A01FU-GR Bipolar Transistor Array
Subcategory: Bipolar (BJT)

HN1A01FU-GR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HN1A01FU-GR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HN1A01FU-GR Features

  • Dual 2 PNP transistor array.
  • 50V collector-emitter breakdown voltage.
  • 150mA maximum collector current.
  • 80MHz transition frequency.
  • 200mW maximum power dissipation.

HN1A01FU-GR Applications

  • Suitable for general switching applications.
  • Used in signal amplification circuits.
  • Ideal for power control functions.
  • Component in discrete logic designs.

HN1A01FU-GR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the HN1A01FU-GR?

50V.

What is the maximum collector current?

150mA.

What is the power dissipation rating?

200mW.

What is the DC current gain at 2mA, 6V?

Minimum hFE is 200.

What package does the HN1A01FU-GR use?

6-TSSOP, SC-88, SOT-363 (US6).

What is the maximum operating junction temperature?

125°C.

What is the transition frequency?

80MHz.

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