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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | 99+ | On Request | On Request |
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The HMMC-5034 from HP is a monolithic microwave integrated circuit (MMIC) power amplifier specifically engineered for wireless transmitter applications within the 37 GHz to 42.5 GHz frequency spectrum. This device provides a typical small-signal gain of 8 dB at 40 GHz and delivers 23 dBm of output power at the 1 dB compression point (P1dB).
Designed for ease of use in 50-ohm environments, the HMMC-5034 features integrated input and output matching circuitry. It operates with a typical bias of 4.5 Volts and 300 mA. The amplifier also includes an integrated output power detector network.
Key electrical characteristics include a minimum input return loss of 9 dB and a minimum output return loss of 10 dB in the 37-40 GHz band. The temperature coefficient of gain is typically 0.019 dB/°C, and the temperature coefficient of output power is typically 0.015 dB/°C, indicating stable performance across varying temperatures.
This MMIC amplifier is suitable for applications requiring high-frequency signal amplification in millimeter-wave links and MVDS systems. Its compact chip size of 1.56 x 1.02 mm makes it ideal for space-constrained designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMMC-5034 operates from 37 to 42.5 GHz. It is specified across two sub-bands: 37-40 GHz and 40-42.5 GHz.
Typical P1dB output power is 23 dBm over 37-40 GHz and 22 dBm over 40-42.5 GHz. Saturated output power is typically 24 dBm and 23 dBm respectively.
Drain supply voltages VD1 and VD2 typically operate at 4.5 V, with a maximum of 5 V. Gate supply voltages VG1 and VG2 have a maximum of -0.8 V. Typical total bias current is 300 mA (165 mA first stage, 285 mA second stage).
Minimum input return loss is 9 dB over 37-40 GHz and 8 dB over 40-42.5 GHz. Minimum output return loss is 10 dB and 9 dB respectively. Typical values are 10 dB and 12 dB.
The chip size is 1.56 x 1.02 mm (61.4 x 40.1 mils) with a thickness of 127 µm.
The channel-to-backside thermal resistance is typically 44 °C/Watt at a channel temperature of 150°C.
Typical reverse isolation is 30 dB over 37-40 GHz and 27 dB over 40-42.5 GHz.