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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMHA2801R2 from ON Semiconductor is a phototransistor optocoupler designed for efficient signal isolation. It utilizes a gallium arsenide infrared emitting diode paired with a silicon phototransistor, housed in a space-saving 4-pin mini-flat package with half-pitch leads.
Key electrical characteristics include a wide current transfer ratio (CTR) ranging from 80% to 600% at a forward current of 5mA, a collector-emitter voltage of up to 80V, and a typical turn-on and turn-off time of 3µs. The device provides robust isolation with a 3.75kV ACRMS rating per UL1577 and a peak working insulation voltage of 565Vpeak per DIN EN/IEC60747-5-5.
This optocoupler is suitable for applications requiring digital logic inputs, microprocessor interfaces, power supply monitoring, and line receivers. Its compact size and SMD mounting make it ideal for high-density circuit board designs. The operating temperature range is -55°C to 100°C.
The HMHA2801R2 is Pb-free and RoHS compliant, meeting environmental standards for modern electronic manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The current transfer ratio for the HMHA2801R2 is 80% to 600% at an input current of 5mA.
The collector-emitter voltage rating for the HMHA2801R2 is 80V.
The insulation voltage for the HMHA2801R2 is 3.75kV ACRMS and 565Vpeak working insulation voltage.
The typical turn-on and turn-off times for the HMHA2801R2 are both 3µs.
The HMHA2801R2 optocoupler is in a 4-pin mini-flat SMD package.
The operating temperature range for the HMHA2801R2 is -55°C to 100°C.