| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The HMC902LP3ETR is a Gallium Arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). It operates within a frequency range of 5 GHz to 11 GHz.
Key electrical specifications include a typical small signal gain of 19.5 dB, a low noise figure of 1.8 dB, and a high output IP3 of 28 dBm. The amplifier requires a single supply voltage of 3.5 V and draws a current of 80 mA. It features a P1dB output power of 16 dBm, making it suitable as a local oscillator (LO) driver for mixers. The input and output are internally matched to 50 Ω.
This LNA is housed in a compact 3 mm x 3 mm, 16-lead LFCSP (QFN) surface mount package. Its design is ideal for applications such as point-to-point and point-to-multi-point radios, military and space systems, and test instrumentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC902LP3ETR operates from 5 GHz to 10 GHz.
The typical gain of the HMC902LP3ETR is 19.5 dB.
The noise figure of the HMC902LP3ETR is 1.8 dB.
It comes in a 16-VFQFN exposed pad package with a 3x3 mm footprint.
The device operates at a supply voltage of 3.5 V.
The typical output power (P1dB) is 16 dBm.