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1,120 pcs
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1120 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The HMC8412LP2FE from Analog Devices is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier. It operates across a frequency range of 0.4 GHz to 11 GHz.
This amplifier provides a typical gain of 15.5 dB and a low noise figure of 1.4 dB. It also features a high output third-order intercept (OIP3) of up to 33 dBm typical. The device requires a single positive supply voltage and is internally matched to 50 Ohms, making it suitable for surface-mount technology (SMT) applications.
Key applications for the HMC8412LP2FE include test instrumentation, telecommunications, military radar and communication systems, electronic warfare, and aerospace. It is housed in a compact, RoHS compliant 2 mm × 2 mm, 6-lead LFCSP package, ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC8412LP2FE operates from 0.4 GHz to 11 GHz.
The typical noise figure for the HMC8412LP2FE is 1.4 dB.
The HMC8412LP2FE provides a typical gain of 15.5 dB.
The HMC8412LP2FE requires a 5V drain supply voltage.
The HMC8412LP2FE is supplied in a RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP package.