| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1628+ | On Request | On Request |
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The HMC789ST89ETR from Analog Devices is a Gaas Ingap RF Amplifier designed for applications requiring high performance in the RF spectrum. This device operates across a frequency range of 0.7 GHz to 2.8 GHz, providing a typical gain of 18 dB and a low noise figure of 3.8 dB. It is suitable for various RF signal amplification tasks.
The amplifier features a P1dB compression point of 23.5 dBm and an OIP3 of 42 dBm, indicating its capability to handle significant signal power while maintaining linearity. It requires a supply voltage of 5 V and draws a typical current of 50 mA, with a power dissipation of 0.85 W.
Packaged in a SOT-89-3 surface-mount case, the HMC789ST89ETR is designed for automated assembly processes. It operates within a temperature range of -55 °C to +85 °C, making it suitable for a wide array of environmental conditions. The amplifier is supplied on a reel, with a factory pack quantity of 500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC789ST89ETR operates from 0.7 GHz to 2.8 GHz.
The typical gain of the HMC789ST89ETR is 18 dB.
The noise figure for the HMC789ST89ETR is 3.8 dB.
The P1dB compression point is 23.5 dBm.
The typical supply voltage is 5 V.
The operating temperature range is -55 °C to +85 °C.
The HMC789ST89ETR is supplied in a SOT-89-3 package.