HMC789ST89ETR The Analog Devices HMC789ST89ETR is an RF Amplifier with a Gaas Ingap technology. It operates from 0.7 GHz to 2.8 GHz and offers a gain of 18 dB.
Mfr Part #:

HMC789ST89ETR

Available from 1 distributors
Mfr Name: Hittite Microwave
Hittite Microwave
The Analog Devices HMC789ST89ETR is an RF Amplifier with a Gaas Ingap technology. It operates from 0.7 GHz to 2.8 GHz and offers a gain of 18 dB.
Total Stock: 2,500 pcs
$ Price Range: $0.75

HMC789ST89ETR Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 1628+ On Request On Request

HMC789ST89ETR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Amplifier Type
Gain
Mounting Style
Noise Figure
Number of Channels
Operating Temperature
Power Dissipation
Technology
Type
Voltage

HMC789ST89ETR Description

Short technical summary and product information.

The HMC789ST89ETR from Analog Devices is a Gaas Ingap RF Amplifier designed for applications requiring high performance in the RF spectrum. This device operates across a frequency range of 0.7 GHz to 2.8 GHz, providing a typical gain of 18 dB and a low noise figure of 3.8 dB. It is suitable for various RF signal amplification tasks.

 

The amplifier features a P1dB compression point of 23.5 dBm and an OIP3 of 42 dBm, indicating its capability to handle significant signal power while maintaining linearity. It requires a supply voltage of 5 V and draws a typical current of 50 mA, with a power dissipation of 0.85 W.

 

Packaged in a SOT-89-3 surface-mount case, the HMC789ST89ETR is designed for automated assembly processes. It operates within a temperature range of -55 °C to +85 °C, making it suitable for a wide array of environmental conditions. The amplifier is supplied on a reel, with a factory pack quantity of 500 units.

HMC789ST89ETR Quick Information

Product Type: RF Amplifier
Series: Hmc789
Canonical Name: HMC789ST89ETR RF Amplifier Driver Amp, externally Tuned, .4-2GHz
Subcategory: Wireless & RF Integrated Circuits

HMC789ST89ETR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HMC789ST89ETR Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

HMC789ST89ETR Features

  • Operates from 0.7 GHz to 2.8 GHz.
  • Provides 18 dB of signal gain.
  • Features a 3.8 dB noise figure.
  • Surface-mount SOT-89-3 package.
  • Designed with Gaas Ingap technology.

HMC789ST89ETR Applications

  • Used in wireless communication systems
  • Suitable for cellular base station amplifiers
  • Ideal for microwave radio links
  • Applied in radar receiver front-ends
  • Used in test and measurement equipment

HMC789ST89ETR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the HMC789ST89ETR?

The HMC789ST89ETR operates from 0.7 GHz to 2.8 GHz.

What is the typical gain of the HMC789ST89ETR RF Amplifier?

The typical gain of the HMC789ST89ETR is 18 dB.

What is the noise figure for the HMC789ST89ETR?

The noise figure for the HMC789ST89ETR is 3.8 dB.

What is the P1dB compression point of the HMC789ST89ETR?

The P1dB compression point is 23.5 dBm.

What is the typical supply voltage required for the HMC789ST89ETR?

The typical supply voltage is 5 V.

What is the operating temperature range for the HMC789ST89ETR?

The operating temperature range is -55 °C to +85 °C.

What package type is the HMC789ST89ETR supplied in?

The HMC789ST89ETR is supplied in a SOT-89-3 package.

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