HMC788ALP2ETR The Analog Devices HMC788ALP2ETR is a GaAs pHEMT MMIC RF Gain Block amplifier operating from 0.01 GHz to 10 GHz. It offers 14 dB of typical gain and is internally matched to 50 Ω.
Mfr Part #:

HMC788ALP2ETR

Available from 3 distributors
Mfr Name: Analog Devices / Maxim Integrated
Analog Devices / Maxim Integrated
The Analog Devices HMC788ALP2ETR is a GaAs pHEMT MMIC RF Gain Block amplifier operating from 0.01 GHz to 10 GHz. It offers 14 dB of typical gain and is internally matched to 50 Ω.
Total Stock: 285 pcs
$ Price Range: $0.99

HMC788ALP2ETR Available from 3 distributors

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244 pcs
244 pcs On Request 1 On Request On Request 20+ On Request On Request
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35 pcs
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HMC788ALP2ETR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Input/Output Impedance
Lead Spacing
Mounting Type
Noise Figure
Output Third-Order Intercept (OIP3)
P1dB
RF Type
Supplier Device Package
Supplier Package
Test Frequency
Voltage

HMC788ALP2ETR Description

Short technical summary and product information.

The HMC788ALP2ETR from Analog Devices is a monolithic microwave integrated circuit (MMIC) gain block amplifier designed for RF applications. It utilizes gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology, providing a wide operational frequency range from 0.01 GHz to 10 GHz.

 

This amplifier features a typical gain of 14 dB and is internally matched to 50 Ω, simplifying integration into existing designs. Key electrical characteristics include a typical 1 dB compression point (P1dB) of 20 dBm and an output third-order intercept (OIP3) of 33 dBm. It operates from a typical supply voltage of 5 V and consumes approximately 76 mA of current.

 

The HMC788ALP2ETR is housed in a compact 2 mm × 2 mm, 6-lead lead frame chip scale package (LFCSP). It is designed for surface mount applications, making it suitable for space-constrained electronic designs.

 

This MMIC amplifier is well-suited for applications such as cellular, 3G, LTE, WiMAX, and 4G LO driver circuits, as well as microwave radio and test and measurement equipment.

HMC788ALP2ETR Quick Information

Product Type: RF Amplifier
Canonical Name: HMC788ALP2ETR GaAs pHEMT MMIC RF Gain Block Amplifier
Subcategory: Gain Block

HMC788ALP2ETR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HMC788ALP2ETR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HMC788ALP2ETR Features

  • 0.01 GHz to 10 GHz operational frequency range.
  • 14 dB typical gain.
  • Internally matched to 50 Ω.
  • 20 dBm typical P1dB.
  • 5V typical supply voltage.

HMC788ALP2ETR Applications

  • Used in cellular and LTE applications.
  • Suitable for WiMAX and 4G LO drivers.
  • Applicable to microwave radio systems.
  • Designed for test and measurement equipment.

HMC788ALP2ETR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operational frequency range of the HMC788ALP2ETR?

The operational frequency range is 0.01 GHz to 10 GHz.

What is the typical gain of the HMC788ALP2ETR amplifier?

The typical gain is 14 dB.

What is the 1 dB compression point (P1dB) for this RF gain block?

The typical 1 dB compression point (P1dB) is 20 dBm.

What supply voltage does the HMC788ALP2ETR require?

The typical supply voltage is 5 V.

What type of package is the HMC788ALP2ETR in?

It is available in a 6-VDFN Exposed Pad, CSP package, also referred to as 6-LFCSP (2x2).

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