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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gain | |
| Gain Flatness | |
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| Noise Figure | |
| Output IP3 | |
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| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The HMC637ALP5E from Analog Devices is a Gallium Arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifier. It operates across a frequency range of 0.1 GHz to 6 GHz, making it suitable for various RF applications.
This amplifier provides key electrical characteristics including 13 dB of gain, 29 dBm of P1dB output power at 1 dB gain compression, and an output third-order intercept (IP3) of 44 dBm. It requires a nominal operating voltage of 12 V and draws 400 mA of current. The gain flatness is specified as ±0.75 dB from 100 MHz to 6 GHz.
Designed for surface mount technology, the HMC637ALP5E is housed in a 32-lead, 5 mm × 5 mm LFCSP package. Its internally matched RF I/Os to 50 Ω simplify integration into systems. Applications include telecom infrastructure, microwave radio, very small aperture terminal (VSAT), military and space systems, test instrumentation, and fiber optics.
Key specifications include a noise figure of 5 dB. The device is supplied in a 32-QFN (5x5) package, compatible with high volume surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC637ALP5E operates from 0.1 GHz to 6 GHz.
The P1dB output power is 29 dBm.
The amplifier provides a gain of 13 dB.
The output IP3 is 44 dBm.
The HMC637ALP5E requires a 12 V supply.
The HMC637ALP5E is supplied in a 32-QFN (5x5) package.