HMC637ALP5E The Analog Devices HMC637ALP5E is a GaAs pHEMT MMIC power amplifier designed for operation from 0.1 GHz to 6 GHz. It offers a gain of 13 dB and P1dB output power of 29 dBm.
Mfr Part #:

HMC637ALP5E

Available from 1 distributors
Mfr Name: Analog Devices / Maxim Integrated
Analog Devices / Maxim Integrated
The Analog Devices HMC637ALP5E is a GaAs pHEMT MMIC power amplifier designed for operation from 0.1 GHz to 6 GHz. It offers a gain of 13 dB and P1dB output power of 29 dBm.
Total Stock: 28 pcs
$ Price Range: $0.99

HMC637ALP5E Available from 1 distributor

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HMC637ALP5E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Current
Frequency
Gain
Gain Flatness
Mounting Type
Noise Figure
Output IP3
P1dB
RF Type
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage

HMC637ALP5E Description

Short technical summary and product information.

The HMC637ALP5E from Analog Devices is a Gallium Arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifier. It operates across a frequency range of 0.1 GHz to 6 GHz, making it suitable for various RF applications.

 

This amplifier provides key electrical characteristics including 13 dB of gain, 29 dBm of P1dB output power at 1 dB gain compression, and an output third-order intercept (IP3) of 44 dBm. It requires a nominal operating voltage of 12 V and draws 400 mA of current. The gain flatness is specified as ±0.75 dB from 100 MHz to 6 GHz.

 

Designed for surface mount technology, the HMC637ALP5E is housed in a 32-lead, 5 mm × 5 mm LFCSP package. Its internally matched RF I/Os to 50 Ω simplify integration into systems. Applications include telecom infrastructure, microwave radio, very small aperture terminal (VSAT), military and space systems, test instrumentation, and fiber optics.

 

Key specifications include a noise figure of 5 dB. The device is supplied in a 32-QFN (5x5) package, compatible with high volume surface-mount assembly.

HMC637ALP5E Quick Information

Product Type: RF Amplifier
Canonical Name: HMC637ALP5E GaAs pHEMT MMIC Power Amplifier
Subcategory: Power Amplifier

HMC637ALP5E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HMC637ALP5E Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HMC637ALP5E Features

  • GaAs pHEMT MMIC power amplifier.
  • Operates from 0.1 GHz to 6 GHz.
  • Provides 13 dB gain and 29 dBm P1dB.
  • Features 44 dBm output IP3.
  • Surface mount 32-QFN (5x5) package.

HMC637ALP5E Applications

  • Ideal for telecom infrastructure.
  • Suitable for microwave radio systems.
  • Used in VSAT applications.
  • Applicable for military and space.
  • Designed for test instrumentation.

HMC637ALP5E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the HMC637ALP5E?

The HMC637ALP5E operates from 0.1 GHz to 6 GHz.

What is the P1dB output power of the HMC637ALP5E?

The P1dB output power is 29 dBm.

What is the gain of the HMC637ALP5E amplifier?

The amplifier provides a gain of 13 dB.

What is the output IP3 for the HMC637ALP5E?

The output IP3 is 44 dBm.

What is the required operating voltage for the HMC637ALP5E?

The HMC637ALP5E requires a 12 V supply.

What type of package is the HMC637ALP5E supplied in?

The HMC637ALP5E is supplied in a 32-QFN (5x5) package.

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