| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,040 pcs
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9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC636ST89ETR from Analog Devices is a High Linearity, Low Noise Gain Block RF Amplifier designed for general-purpose applications. It offers a wide operating frequency range from 200 MHz to 4 GHz, making it suitable for various RF systems.
Key electrical characteristics include a typical gain of 13 dB, a low noise figure of 2.5 dB, and a P1dB compression point of 22 dBm. The amplifier operates with a supply voltage of 5 V and draws a typical current of 155 mA. It also features a third-order intercept point (OIP3) of 39 dBm and an input return loss of 10 dB.
This RF amplifier is constructed using GaAs technology and comes in a SOT-89-4 surface-mount package. It is designed for operation within a temperature range of -40°C to +85°C. The component is supplied on a reel, with a factory pack quantity of 500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC636ST89ETR operates from 0.2 GHz to 4 GHz.
The typical gain of the HMC636ST89ETR is 13 dB.
The typical noise figure is 2.5 dB.
The P1dB compression point is 22 dBm.
The OIP3 is 39 dBm.
The operating supply voltage is 5 V.
The operating temperature range is -40°C to +85°C.